✦ LIBER ✦

Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate

✍ Scribed by Lee, Seung-Jae; Bak, Gyu Hyeong; Jeon, Seong-Ran; Lee, Sang Hern; Kim, Sang-Mook; Jung, Sung Hoon; Lee, Cheul-Ro; Lee, In-Hwan; Leem, Shi-Jong; Baek, Jong Hyeob

Book ID: 121862531
Publisher: Institute of Pure and Applied Physics
Year: 2008
Tongue: English
Weight: 481 KB
Volume: 47
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.3070

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of crack-free GaN epitaxial thin

Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE

✍ Quanzhong Jiang; Michael J. Edwards; Philip A. Shields; Duncan W. E. Allsopp; Ch 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 736 KB

Growth of crack-free GaN on maskless Si(

Growth of crack-free GaN on maskless Si(111) by MOVPE

✍ X. Chen; T. Uesugi 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 197 KB

An investigation on the epitaxial growth

An investigation on the epitaxial growth of GaN film on Si(111) substrate

✍ H. X. Zhang; Z. Z. Ye; B. H. Zhao 📂 Article 📅 2000 🏛 Springer 🌐 English ⚖ 44 KB

Selective Area Growth of GaN on Stripe-P

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy

✍ Kawaguchi, Y. ;Honda, Y. ;Yamaguchi, Y. ;Sawaki, N. ;Hiramatsu, K. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

Growth of crack-free, carbon-doped GaN a

Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

✍ Haffouz, S.; Tang, H.; Rolfe, S.; Bardwell, J. A. 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 432 KB

Growth of GaN nanowall network on Si (11

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

✍ Aihua Zhong, Kazuhiro Hane 📂 Article 📅 2012 🏛 Springer-Verlag 🌐 English ⚖ 535 KB