✦ LIBER ✦

Microstructural evolution upon annealing in Ar-implanted Si

✍ Scribed by B.S. Li; C.H. Zhang; Y.T. Yang; L.Q. Zhang; C.L. Xu

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 687 KB
Volume: 257
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.05.129

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural evolution in Fe ion implanted

Structural evolution in Fe ion implanted Si upon thermal annealing

✍ Keisuke Omae; In-Tae Bae; Muneyuki Naito; Manabu Ishimaru; Yoshihiko Hirotsu; Ja 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 193 KB

Roughness evolution of Si surfaces upon

Roughness evolution of Si surfaces upon Ar ion erosion

✍ V.I.T.A. de Rooij-Lohmann; I.V. Kozhevnikov; L. Peverini; E. Ziegler; R. Cuerno; 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 391 KB

Microstructure evolution of hydrogen-imp

Microstructure evolution of hydrogen-implanted silicon during the annealing process

✍ Jing Wang; Qinghua Xiao; Hailing Tu; Beiling Shao; Ansheng Liu 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 795 KB

The microstructure evolution of a hydrogen-implanted Si(111) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (111) planes. A few amorphous clumps

Modeling of extrinsic extended defect ev

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

✍ C.J. Ortiz; F. Cristiano; B. Colombeau; A. Claverie; N.E.B. Cowern 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 175 KB

A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and

Microstructural evolution in silicon imp

Microstructural evolution in silicon implanted with chlorine ions

✍ C.H. Zhang; T. Shibayama; Y.F. Jin; Y.T. Yang; L.H. Zhou; Y. Song 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 619 KB

In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 • 10 15 , 5 • 10 15 , 1 • 10 16 and 5 • 10 16 ions cm À2 and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microsco

Microstructure evolution in titanium-imp

Microstructure evolution in titanium-implanted iron

✍ D.M. Follstaedt 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 54 KB