Microstructural characterization of stoichiometric buried Si3N4 films
β Scribed by E.C. Paloura; A. Ginoudi; A. Markwitz; Ch. Lioutas; M. Katsikini; K. Bethge; S. Aminpirooz; H. Rossner; E. Holub-Krappe; T. Zorba; D. Siapkas
- Book ID
- 113287382
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 467 KB
- Volume
- 113
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Polycrystalline carbon nitride films were synthesized using the rf diode sputtering technique. The carbon nitride films were evaluated with IR spectroscopy, X-ray diffraction and Auger electron spectroscopy. The more important findings are that polycrystalline C3N 4 films could be deposited on singl
It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N Γ· implantation with E--150 keV, β’ ---5.0 Γ 1017 N+cm 2 and TA = 1200 Β°C (2 h). To achieve this, preliminary implantation with E = 150 keV and β’/> 5.0 x 1016 O + cm 2 has to be carried out. Radi