Stoichiometric growth of polycrystalline C3N4 thin films

✍ Scribed by Yin-an Li; Ze-bo Zhang; Si-shen Xie; Guo-zhen Yang

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 209 KB
• Volume: 247
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(95)01209-7

✦ Synopsis

Polycrystalline carbon nitride films were synthesized using the rf diode sputtering technique. The carbon nitride films were evaluated with IR spectroscopy, X-ray diffraction and Auger electron spectroscopy. The more important findings are that polycrystalline C3N 4 films could be deposited on single-crystal Si(lll) wafers at ambient temperatures during deposition and the nitrogen-carbon concentration ratios X = [N]/[C] attained the stoichiometric value 1.33 required for the C3N 4 structure in the films.