Microstructural characteristics of mixed III–V epitaxial layers
✍ Scribed by K. Lee; B.A. Philips; R.S. McFadden; S. Mahajan
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 840 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0921-5107
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The accurate characterisation of epitaxial layers is a key component in the research and development of advanced III-V optoelectronic and high speed devices. A detailed understanding of chemical impurities and structural defects in the material and their effects on device performance and reliability
## Quasi -elastic light scattering by electron single particle excitations and inelastic light scattering by coupled electron-phonon excitations are studied in epitaxial layers grown on semiinsulating AIII-BV-substrates. A Nd:YAG laser beam was used as a microprobe. The spectra reflect the concent