Chemical and structural characterisation of III–V epitaxial layers

✍ Scribed by M.J. Cardwell

• Publisher: Elsevier Science
• Year: 1985
• Weight: 723 KB
• Volume: 129
• Category: Article
• ISSN: 0378-4363
• DOI: 10.1016/0378-4363(85)90556-x

✦ Synopsis

The accurate characterisation of epitaxial layers is a key component in the research and development of advanced III-V optoelectronic and high speed devices. A detailed understanding of chemical impurities and structural defects in the material and their effects on device performance and reliability must be achieved. Furthermore the modern generation of III-V devices demands the analysis of thinner and thinner layers of differing composition, which presents more problems to the analyst.

A review of the techniques used to measure the chemical composition and impurities of epitaxial layers is made.

This includes direct chemical measurement, such as secondary ion mass spectrometry and Auger electron spectroscopy, as well as indirect methods. The methods used to assess the structural perfection of layers is described and comparisons made between a variety of high resolution methods.