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Growth and characterisation of GaN epitaxial layers

✍ Scribed by R Paszkiewicz; R Korbutowicz; D Radziewicz; M Panek; B Paszkiewicz; J Kozlowski; B Boratynski; M Tlaczala; SV Novikov

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
407 KB
Volume
50
Category
Article
ISSN
0042-207X

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## Abstract A method of obtaining GaN from GaBr~3~ Β· 4 NH~3~ by radiation heating of the substrate is described. The results of investigations are given concerning the growth rate of polycrystalline GaN layers on [111] oriented silicon substrates in dependence on the changes of the temperature of r