Inelastic light scattering characterization of epitaxial grown III–V semiconductor microstructures

✍ Scribed by B.H. Bairamov; V.V. Toporov; G. Irmer; J. Monecke

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 244 KB
• Volume: 9
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(91)90260-x

✦ Synopsis

Quasi

-elastic light scattering by electron single particle excitations and inelastic light scattering by coupled electron-phonon excitations are studied in epitaxial layers grown on semiinsulating AIII-BV-substrates. A Nd:YAG laser beam was used as a microprobe. The spectra reflect the concentration and distribution of the free carriers. In the range of low electron concentrations the scattering by electron density fluctuations dominates which is accurately described by Gaussian curves at room temperature.