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Inelastic light scattering characterization of epitaxial grown III–V semiconductor microstructures

✍ Scribed by B.H. Bairamov; V.V. Toporov; G. Irmer; J. Monecke


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
244 KB
Volume
9
Category
Article
ISSN
0749-6036

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✦ Synopsis


Quasi

-elastic light scattering by electron single particle excitations and inelastic light scattering by coupled electron-phonon excitations are studied in epitaxial layers grown on semiinsulating AIII-BV-substrates. A Nd:YAG laser beam was used as a microprobe. The spectra reflect the concentration and distribution of the free carriers. In the range of low electron concentrations the scattering by electron density fluctuations dominates which is accurately described by Gaussian curves at room temperature.


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