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Microstructural changes of CdTe during the annealing process

✍ Scribed by A.J Chapman; D.W Lane; K.D Rogers; M.E Özsan

Book ID
114085391
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
119 KB
Volume
403-404
Category
Article
ISSN
0040-6090

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The microstructure evolution of a hydrogen-implanted Si(111) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (111) planes. A few amorphous clumps