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Microstructural and magnetic study of Fe-implanted 6H-SiC

✍ Scribed by C. Dupeyrat; A. Declémy; M. Drouet; D. Eyidi; L. Thomé; A. Debelle; M. Viret; F. Ott

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
429 KB
Volume
404
Category
Article
ISSN
0921-4526

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Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Ñuences ranging from 7.5 Â 1017 to 1 Â 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc