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Microinhomogeneities of Charge Carrier Concentration in GaAs

โœ Scribed by Dr. rer. nat. T. Kallenowsky; Dr.-Ing. H. Koi; Dr. sc. nat. H. Boudriot; O. Oettel; Prof. Dr. rer. nat. habil. H. A. Schneider


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
312 KB
Volume
26
Category
Article
ISSN
0232-1300

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In-situ Determination of the Carrier Con
โœ Pristovsek, M. ;Tsukamoto, S. ;Koguchi, N. ;Han, B. ;Haberland, K. ;Zettler, J.- ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 139 KB ๐Ÿ‘ 1 views

We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole