Microhardness and internal stress of Si3N4-SiC films prepared by plasma CVD
โ Scribed by Kiichiro Kamata; Naoyoshi Aizawa; Minoru Moriyama
- Publisher
- Springer
- Year
- 1986
- Tongue
- English
- Weight
- 215 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0261-8028
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Thin plasma polymer films were deposited from several liquid monomers (mainly siloxane-type monomers) in a low-temperature cascade arc torch (CAT) reactor. The effects of monomer structures and plasma parameters on internal stress in the films were experimentally studied. By appropriately adjusting
In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 ยฐC) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa