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Hybridization between Si3N4and SiC films by plasma CVD

✍ Scribed by Kiichiro Kamata; Yuuji Maeda; Minoru Moriyama


Publisher
Springer
Year
1986
Tongue
English
Weight
850 KB
Volume
5
Category
Article
ISSN
0261-8028

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Epitaxial growth of 3C-SiC films on Si s
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The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a