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Micro-Raman study of strain fields around dislocations in GaAs

✍ Scribed by Irmer, G. ;Jurisch, M.

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
872 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields around single dislocations with high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs are considered, and the corresponding Raman shifts of the phonons are calculated. Due to the finite local resolution, mappings show averaged strain values. Requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations are discussed. (Β© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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