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Raman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE

✍ Scribed by Takayuki Takeuchi; Chikako Maezawa; Takashi Nomura; Kenji Ishikawa; Masahiro Miyao; Minoru Hagino

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 282 KB
Volume: 41-42
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(89)90116-5

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