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Micro-Raman investigation of cubic silicon carbide crystals grown from the travelling zone method

✍ Scribed by Lewandowska, R. ;Eid, J. ;Camassel, J. ;Santailler, J. L. ;Ferrand, B.

Book ID: 105364173
Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 185 KB
Volume: 204
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200674134

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✦ Synopsis

Abstract

Micro‐Raman spectroscopy has been used to investigate two different 3C‐SiC crystals grown from the melt using the travelling‐zone method. The melt was a C‐rich silicon solution held at 1700 °C. Two different (relative) positions of the seed and feed (bottom and up, respectively) were investigated. We show that much better results, with smaller internal strain, can be obtained when placing the seed on top of the feed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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