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Micro-raman characterization of molecular-beam epitaxial ge heterolayers on Si substrates

✍ Scribed by M. Ichimura; Y. Moriguchi; A. Usami; T. Wada; A. Wakahara; A. Sasaki

Book ID
112901448
Publisher
Springer US
Year
1993
Tongue
English
Weight
570 KB
Volume
22
Category
Article
ISSN
0361-5235

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Low-temperature molecular beam epitaxy of Ge on Si
✍ J.P. LeitΓ£o; A. Fonseca; N.A. Sobolev; M.C. Carmo; N. Franco; A.D. Sequeira; T.M πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 389 KB

Multilayers of Ge were deposited on (0 0 1) Si at low temperatures (250 and 300 C). The structural characterization was done by X-ray diffraction and reflectivity as well as by atomic force microscopy technics. The photoluminescence (PL) spectra reveal a quantum well (QW) emission that shifts to low