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Low-temperature molecular beam epitaxy of Ge on Si

✍ Scribed by J.P. Leitão; A. Fonseca; N.A. Sobolev; M.C. Carmo; N. Franco; A.D. Sequeira; T.M. Burbaev; V.A. Kurbatov; M.M. Rzaev; A.O. Pogosov; N.N. Sibeldin; V.A. Tsvetkov; H. Lichtenberger; F. Schäffler

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
389 KB
Volume
8
Category
Article
ISSN
1369-8001

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✦ Synopsis

Multilayers of Ge were deposited on (0 0 1) Si at low temperatures (250 and 300 C). The structural characterization was done by X-ray diffraction and reflectivity as well as by atomic force microscopy technics. The photoluminescence (PL) spectra reveal a quantum well (QW) emission that shifts to lower energy with increasing Ge thickness. Besides this shift, we observe a change in the energy of the TO phonon from that of the Si-Si to that of the Si-Ge vibration. Passivation measurements enable us to separate the QW luminescence from the defect-related emission.

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Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced form