✦ LIBER ✦

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1 1 0) and other high-index surfaces

✍ Scribed by F. Reiher; A. Dadgar; J. Bläsing; M. Wieneke; A. Krost

Book ID: 108165981
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 504 KB
Volume: 312
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.10.032

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Controlling the size of InAs quantum dot

Controlling the size of InAs quantum dots on Si1−xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

✍ Kenichi Kawaguchi; Hiroji Ebe; Mitsuru Ekawa; Akio Sugama; Yasuhiko Arakawa 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 466 KB

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increas

The growth morphologies of GaN layer on

The growth morphologies of GaN layer on Si(1 1 1) substrate

✍ Yuan Lu; Xianglin Liu; Da-Cheng Lu; Hairong Yuan; Guiqing Hu; Xiaohui Wang; Zhan 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 314 KB

Comparison of ZnO:GaN films on Si(1&#xa0

Comparison of ZnO:GaN films on Si(1 1 1) and Si(1 0 0) substrates by pulsed laser deposition

✍ N. Gopalakrishnan; B.C. Shin; H.S. Lim; G.Y. Kim; Y.S. Yu 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Selective epitaxy of InP on Si(1 0&

Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

✍ Maki Sugai; Toshio Kochiya; Yutaka Oyama; Jun-Ichi Nishizawa 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 574 KB

The growth and characterization of GaN g

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

✍ Lianshan Wang; Xianglin Liu; Yude Zan; Du Wang; Da-Cheng Lu; Zhanguo Wang; Yutia 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 629 KB

Investigation of defect structures in In

Investigation of defect structures in InGaN/GaN multiple quantum wells grown on Si(1 1 1) substrate by metalorganic vapor phase epitaxy

✍ G.M. Wu; Y.L. Kao 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 504 KB

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1&#xa0;1&#xa0;0) and other high-index surfaces

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1 1 0) and other high-index surfaces