✦ LIBER ✦

Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets

✍ Scribed by Masaya Shimizu; Kazumasa Hiramatsu; Nobuhiko Sawaki

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 324 KB
Volume: 145
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)91052-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Selective growth of wurtzite GaN and Alx

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

✍ Yoshiki Kato; Shota Kitamura; Kazumasa Hiramatsu; Nobuhiko Sawaki 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 882 KB

Growth of GaN Layers by One-, Two-, and

Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

✍ Ohkawa, K. ;Hirako, A. ;Yoshitani, M. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 201 KB 👁 2 views

Subject classification: 73.61.Ey; 81.15.Kk; S7.14 One-, two-and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achievin

Metalorganic vapor phase epitaxy growth

Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates

✍ T. Detchprohm; K. Hiramatsu; N. Sawaki; I. Akasaki 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 334 KB

Selective Area Growth of GaN on Stripe-P

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy

✍ Kawaguchi, Y. ;Honda, Y. ;Yamaguchi, Y. ;Sawaki, N. ;Hiramatsu, K. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

Studies of GaxIn1−xP layers grown by met

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

✍ A. Gomyo; K. Kobayashi; S. Kawata; I. Hino; T. Suzuki; T. Yuasa 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 569 KB