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Metal-insulator transition in a doped semiconductor

✍ Scribed by Rosenbaum, T. F.; Milligan, R. F.; Paalanen, M. A.; Thomas, G. A.; Bhatt, R. N.; Lin, W.


Book ID
121332500
Publisher
The American Physical Society
Year
1983
Tongue
English
Weight
681 KB
Volume
27
Category
Article
ISSN
1098-0121

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## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co