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Antiferromagnetic phase in doped semiconductors near the insulator–metal phase transition

✍ Scribed by A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek; S. I. Goloshchapov; E. N. Mokhov

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
212 KB
Volume
3
Category
Article
ISSN
1862-6351

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✦ Synopsis

Abstract

We show for n ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with concentration of the electrons in local minima or local antiferromagnetic spin pairing (“spin glass”) in the insulating state just below the IM transition. In the investigated semiconductors manifestation of the latter is observed as a change from Curie to a Curie–Weiss behaviour with negative constant Θ. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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