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Ferromagnetism of low-dimensional Mn-doped III-V semiconductor structures in the vicinity of the insulator-metal transition

✍ Scribed by Aronzon, B. A.; Pankov, M. A.; Rylkov, V. V.; Meilikhov, E. Z.; Lagutin, A. S.; Pashaev, E. M.; Chuev, M. A.; Kvardakov, V. V.; Likhachev, I. A.; Vihrova, O. V.; Lashkul, A. V.; Lähderanta, E.; Vedeneev, A. S.; Kervalishvili, P.


Book ID
121359738
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
849 KB
Volume
107
Category
Article
ISSN
0021-8979

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## Abstract We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the