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Mechanisms of Quantum Dot Energy Engineering by Metalorganic Vapor Phase Epitaxy on Patterned Nonplanar Substrates

โœ Scribed by Pelucchi, E.; Watanabe, S.; Leifer, K.; Zhu, Q.; Dwir, B.; De Los Rios, P.; Kapon, E.


Book ID
126141852
Publisher
American Chemical Society
Year
2007
Tongue
English
Weight
408 KB
Volume
7
Category
Article
ISSN
1530-6984

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Selective Growth of Cubic GaN on Pattern
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl