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Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates

โœ Scribed by Mohan, Premila; Bag, Rajesh; Singh, Sunita; Kumar, Anand; Tyagi, Renu


Book ID
121424487
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
844 KB
Volume
23
Category
Article
ISSN
0957-4484

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Selective Growth of Cubic GaN on Pattern
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl