✦ LIBER ✦

Mechanisms of chemical vapor deposition of silicon

✍ Scribed by J. Nishizawa; H. Nihira

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 556 KB
Volume: 45
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(78)90418-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Mechanism of chemical vapor deposition o

Mechanism of chemical vapor deposition of silicon

✍ J. Nishizawa; M. Saito 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 351 KB

Facet formation mechanism of silicon sel

Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition

✍ Tohru Aoyama; Taeko Ikarashi; Keiko Miyanaga; Toru Tatsumi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 656 KB

Nonstoichiometry and nanocrystallization

Nonstoichiometry and nanocrystallization of silicon-rich silicon carbide deposited by chemical vapor deposition

✍ A. Josiek 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 444 KB

Reaction Kinetics in Silicon Chemical Va

Reaction Kinetics in Silicon Chemical Vapor Deposition

✍ Kenichi Tonokura; Mitsuo Koshi 📂 Article 📅 2003 🏛 John Wiley and Sons ⚖ 72 KB 👁 1 views

Modeling of flame assisted chemical vapo

Modeling of flame assisted chemical vapor deposition of silicon films

✍ M. Masi; C. Cavallotti; E. Raffa 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 327 KB 👁 1 views

## Abstract The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline fi

Deposition of silicon-based dielectrics

Deposition of silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition

✍ G. Lucovsky; D.V. Tsu 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 958 KB