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Mechanism of negative transconductance in heterostructure field-effect transistors

✍ Scribed by Baek, J.; Shur, M.


Book ID
114536826
Publisher
IEEE
Year
1990
Tongue
English
Weight
426 KB
Volume
37
Category
Article
ISSN
0018-9383

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Microwave performance of ZnO/ZnMgO heter
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## Abstract We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field‐effect transistors (HFETs). The structure consisted of a 15‐nm‐thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an __a__‐sapphire substrate. Two‐finger type HFETs with 1 o