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The resonant-tunneling field-effect transistor: A new negative transconductance device

โœ Scribed by Sen, S.; Capasso, F.; Beltram, F.; Cho, A.Y.

Book ID
114596052
Publisher
IEEE
Year
1987
Tongue
English
Weight
988 KB
Volume
34
Category
Article
ISSN
0018-9383

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We develop a theory of a resonant tunneling through a quantum wire placed in transverse electric field and show that transistor action can be caused via the electric-field-induced changes of the symmetry of electron wavefunctions. We evaluate the current-voltage characteristics, transconductance and