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Impact of interface impurities on heterostructure field-effect transistors

✍ Scribed by Reynolds, C.L., Jr.; Vuong, H.H.T.; Peticolas, L.J.


Book ID
114534857
Publisher
IEEE
Year
1992
Tongue
English
Weight
599 KB
Volume
39
Category
Article
ISSN
0018-9383

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Microwave performance of ZnO/ZnMgO heter
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## Abstract We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field‐effect transistors (HFETs). The structure consisted of a 15‐nm‐thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an __a__‐sapphire substrate. Two‐finger type HFETs with 1 o