Field-effect transistors based on poly(3-hexylthiophene): Effect of impurities
โ Scribed by Mathieu Urien; Guillaume Wantz; Eric Cloutet; Lionel Hirsch; Pascal Tardy; Laurence Vignau; Henri Cramail; Jean-Paul Parneix
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 293 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1566-1199
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๐ SIMILAR VOLUMES
With the aim of enhancing the field-effect mobility of poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs), we added functionalized multiwalled carbon nanotubes (CNTs) to the P3HT solution prior to film formation. The nanotubes were found to be homogeneously dispersed in the P3HT films bec
Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al dopin