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Mechanism of formation of GaN buffer layers on sapphire by chemical-vapor epitaxy

✍ Scribed by E. N. Vigdorovich

Book ID: 110144684
Publisher: SP MAIK Nauka/Interperiodica
Year: 2005
Tongue: English
Weight: 50 KB
Volume: 50
Category: Article
ISSN: 1063-7745
DOI: 10.1134/1.2133991

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