Mechanism and dissolution rates of anodic oxide films on silicon
β Scribed by Liu, D.Q.; Blackwood, D.J.
- Book ID
- 121676748
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 835 KB
- Volume
- 105
- Category
- Article
- ISSN
- 0013-4686
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar
The temperature distribution alongthe vertical pores of the anodicoxide films onalumhrium was calculated for usual conditions of anodizing in 10% sulphuric acid solution by taking into account the accumulation of both Joule heat and the heat of formation of oxide at the pore-base and the outward con