## Abstract Optical microscopy (OM), scanning electron microscopy (SEM) and analytical transmission electron microscopy (AEM) were used to characterise anocid films on aluminium. Of special interest in our investigations was to study the dependence of the microstructure of the films on the current
On the mechanism of dissolution of porous oxide films on aluminium during anodizing
โ Scribed by M. Nagayama; K. Tamura
- Publisher
- Elsevier Science
- Year
- 1968
- Tongue
- English
- Weight
- 833 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0013-4686
No coin nor oath required. For personal study only.
โฆ Synopsis
The temperature distribution alongthe vertical pores of the anodicoxide films onalumhrium was calculated for usual conditions of anodizing in 10% sulphuric acid solution by taking into account the accumulation of both Joule heat and the heat of formation of oxide at the pore-base and the outward conduction of heat through the solution-filled pore. The results show that a steady state of distribution is established at any instant and at any film thickness during anodizing and that the temperature rise at the pore-base is-always negligibly &all.
This conclusion was conBrmed bv some exueriments on the dissolution behaviour of oxide films. It was demonstrated that small c&ges in the bulk solution temperature significantly affect the dissolution rate and anodizing current. It was also shown that the dissolution rate of oxide at the porebase is ahnost constant irrespective of the film thickness and of the time of anodizing. This rate was evaluated in the manner reported previously by subtracting the dissolution rate at the side walls of the pores from the total dissolution rate. These facts are in direct opposition to the 'thermal mechanism' and suggest that the extra-high rate of dissolution during anodizing almost certainly results from the high electrical field applied across the barrier layer.
๐ SIMILAR VOLUMES
## Aluminium specimens were anodized galvanostatically in a thermostated and vigorously stirred bath of H,SO, 15% w/v at different bath temperatures and current densities and for long anodization times, suflicient to produce the maximum or near maximum limiting film thickness, and the anodic poten
The mechanism of growth of porous anodic AI,O, films at various bath temperatures, current densities and H,SO, concentrations was studled for tiims produced in a vigorously stirred bath at anodization times higher than those at which the maximum pore diameter behind or at film surface approaches fir
## Ahstrati-Porous anodic Al,4 flhns were investigated for their behaviour during hydrothermal treatment in H,O at 100ยฐC and a mechanism for the process of oxide hydration was proposed. The films were prepared galvanostatically in a 15% w/v HsSO, bath at 20, 25 and 30ยฐC and at 5, 15 and 35 mA cm-'