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Measuring thickness of semi-fluid layers using force spectroscopy

✍ Scribed by A. Kühle; J. Garnaes

Publisher
Springer
Year
2001
Tongue
English
Weight
171 KB
Volume
72
Category
Article
ISSN
1432-0630

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Overlayers of SiO 2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxi