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Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

✍ Scribed by J.M Barker; D.K Ferry; S.M Goodnick; D.D Koleske; A.E Wickenden; R.L Henry

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
186 KB
Volume
63
Category
Article
ISSN
0167-9317

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✦ Synopsis

AlGaN / GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 V environment to determine the room temperature velocity-field characteristic of the structures. A low field 2 7 mobility of 250 cm / V s and an estimated electron velocity of | 2 3 10 cm / s was attained at a field of 180 kV/ cm.

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