𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Direct Observation of Pyroelectric Fields in InGaN/GaN and AlGaN/GaN Heterostructures

✍ Scribed by O. Gfrörer; C. Gemmer; J. Off; J.S. Im; F. Scholz; A. Hangleiter

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
108 KB
Volume
216
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

✦ Synopsis

In this paper we investigate the influence of spontaneous polarization on the luminescence behavior of nitride heterostructures. Spontaneous polarization is normally screened by charged surface adsorbates. Using electron stimulated desorption we can remove this coverage and spontaneous polarization comes into effect. For GaN/Al 0X15 GaN and In 0X11 GaN quantum wells this results in an enormous blue-shift of the emission, in our case of up to 500 meV. In bulk-like layers the Franz-Keldysh effect slightly lowers the emission energies and the lines become broadened.

📜 SIMILAR VOLUMES

Properties of Quantum Well Excitons in G
Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures
✍ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 195 KB 👁 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well