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Measurement of the state of stress in silicon with micro-Raman spectroscopy

✍ Scribed by Harris, Stephen J.; O’Neill, Ann E.; Yang, Wen; Gustafson, Peter; Boileau, James; Weber, W. H.; Majumdar, Bhaskar; Ghosh, Somnath

Book ID
120516627
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
554 KB
Volume
96
Category
Article
ISSN
0021-8979

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Micro-Raman spectroscopy allows one to measure stress in crystalline materials. The method is nondestructive and provides microscopic lateral resolution. In this paper we show that resonance excitation using an ultraviolet (UV) laser line strongly enhances the depth resolution in micro-Raman spectro