An application of Raman spectroscopy on the measurement of residual stress in porous silicon
β Scribed by Yilan Kang; Yu Qiu; Zhenkun Lei; Ming Hu
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 336 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0143-8166
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The buckling method is presently one of the most commonly used methods in residual stress measurement, but still suffers from the problem that an array of structures occupying a large die area is required. In this paper, the buckling characteristics of annular thin plates were investigated and a new
An analytical framework for determination of scratch-induced residual stress within SiC grains of ZrB 2 -SiC composite is developed. Using a ''secular equation" that relates strain to Raman-peak shift for zinc-blende structures and the concept of sliding blister field model for scratch-induced resid
optical microscopy after chemical treatment of about 35 mm with no preferential orientation [8]. Samples were mechanically cut (thickness: 2 mm, diameter: 12 mm) and polished to a 5 mm (SiC paper) or 1 mm (diamond paste) surface finish. Before the oxidation treatment, samples were washed in an ethan