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Measurement of the lattice constant of Si-Ge heteroepitaxial layers grown on a silicon substrate


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
163 KB
Volume
30
Category
Article
ISSN
0042-207X

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Quantitative local strain measurements i
✍ N. Cherkashin; M.J. HΓΏtch; E. Snoeck; F. HΓΌe; J.M. Hartmann; Y. Bogumilowicz; A. πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 391 KB

This paper reports on quantitative measurements of strain in a 7.5 nm compressive strained Ge/5.1 nm tensile strained Si bi-layer grown by reduced pressure chemical vapour deposition on top of a relaxed Si 0.5 Ge 0.5 virtual substrate. Geometric phase analysis of high resolution transmission electro