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Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO2 patterned Si template

✍ Scribed by Jooyoung Lee; Mao-Nan Chang; Kang L. Wang


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
306 KB
Volume
37
Category
Article
ISSN
0026-2692

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