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MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (1 1 1)Si substrates

✍ Scribed by Jihyun Paek; Masahito Yamaguchi; Hiroshi Amano


Book ID
108166271
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
346 KB
Volume
323
Category
Article
ISSN
0022-0248

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We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM