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MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

✍ Scribed by Yu Cao; Kejia Wang; Guowang Li; Tom Kosel; Huili Xing; Debdeep Jena


Book ID
108166298
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
722 KB
Volume
323
Category
Article
ISSN
0022-0248

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MBE growth of AlN/GaN-based photovoltaic
✍ Monroy, E. ;Guillot, F. ;Baumann, E. ;Giorgetta, F. R. ;Hofstetter, D. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 370 KB

## Abstract We report on the molecular‐beam epitaxial growth, fabrication and characterization of AlN/GaN photovoltaic quantum well infrared photodetectors operating at 1.55 Β΅m. Devices display a spectrally‐narrow photovoltaic response to p‐polarized light in the near infrared at room temperature.