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MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures

✍ Scribed by H. Künzel; J. Böttcher; A. Hase; C. Schramm

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
358 KB
Volume
21
Category
Article
ISSN
0921-5107

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✦ Synopsis

Molecular beam epitaxy-grown Al(Ga)InAs/GalnAs single quantum well and multiple quantum well structures, comprising ternary and quaternary barriers, were investigated for laser device applications. Barrier materials of excellent lateral uniformity and high optical and crystalline quality, as well as low interface charge densities of the Al(Ga)InAs/GalnAs heterojunctions, were achieved. The influence of buffer configuration and barrier composition on the well emission properties was studied.

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✍ G. Trevisi; L. Seravalli; P. Frigeri; C. Bocchi; V. Grillo; L. Nasi; I. Suárez; 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 120 KB

## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA