✦ LIBER ✦
Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
✍ Scribed by H. Künzel; J. Böttcher; A. Hase; C. Heedt; H. Hoenow
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 370 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0921-5107
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