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MBE growth of high quality In0.4Ga0.6AsGaAs and it's application to photodetector

✍ Scribed by Y.W. Lin; Y.C. Tzeng; P. Ribas; R.M. Park

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 367 KB
Volume: 12
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(92)90266-8

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