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Maximum concentration of implanted projectiles during ion sputtering

โœ Scribed by Yu Kudriavtsev


Book ID
114171651
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
83 KB
Volume
160
Category
Article
ISSN
0168-583X

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Sample contamination caused by sputterin
โœ PLF Hemment ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 315 KB

Data is presented which shows that both forward and back sputtering can be the cause of heavy metal surface contamination of samples during ion implantation. Rutherford backscattering is used to show that contamination levels can be in excess of 1 and 0.02% of the implanted dose for forward and back