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Mathematical modeling of semiconductor-on-insulator (SOI) device operation

✍ Scribed by Yamaguchi, K.


Book ID
114594804
Publisher
IEEE
Year
1984
Tongue
English
Weight
587 KB
Volume
31
Category
Article
ISSN
0018-9383

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Modelling of metal–insulator–semiconduct
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A straight-forward model of a metal-insulator-semiconductor (MIS) device that accommodates an arbitrarily defined insulating potential barrier is described. Using the model, current density-voltage (J-V) curves of MIS devices featuring a single silicon (Si) quantum well (QW) embedded between silicon