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Device level modeling of metal-insulator-semiconductor interconnects

✍ Scribed by Gaofeng Wang; Xiaoning Qi; Zhiping Yu

Book ID
114538777
Publisher
IEEE
Year
2001
Tongue
English
Weight
241 KB
Volume
48
Category
Article
ISSN
0018-9383

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Modelling of metal–insulator–semiconduct
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✍ C. Flynn; D. KΓΆnig; M.A. Green; G. Conibeer πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 680 KB

A straight-forward model of a metal-insulator-semiconductor (MIS) device that accommodates an arbitrarily defined insulating potential barrier is described. Using the model, current density-voltage (J-V) curves of MIS devices featuring a single silicon (Si) quantum well (QW) embedded between silicon