๐”– Bobbio Scriptorium
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A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices

โœ Scribed by Doghish, M.Y.; Ho, F.D.

Book ID
114534949
Publisher
IEEE
Year
1992
Tongue
English
Weight
762 KB
Volume
39
Category
Article
ISSN
0018-9383

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Modelling of metalโ€“insulatorโ€“semiconduct
Modelling of metalโ€“insulatorโ€“semiconductor devices featuring a silicon quantum well
โœ C. Flynn; D. Kรถnig; M.A. Green; G. Conibeer ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 680 KB

A straight-forward model of a metal-insulator-semiconductor (MIS) device that accommodates an arbitrarily defined insulating potential barrier is described. Using the model, current density-voltage (J-V) curves of MIS devices featuring a single silicon (Si) quantum well (QW) embedded between silicon