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Materials Modification by High-fluence Ion Beams || Fast-Ion-Induced Defects in Silicon Studied by Deep Level Transient Spectroscopy

✍ Scribed by Kelly, Roger; Silva, M. Fernanda

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Point defects in MeV ion-implanted silic

✍ B.G. Svensson; C. Jagadish; A. Hallén; J. Lalita 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 810 KB

Materials Modification by High-fluence I

✍ Kelly, Roger; Silva, M. Fernanda 📂 Article 📅 1989 🏛 Springer Netherlands ⚖ 786 KB

Deep level defects in CdTe materials stu

✍ Elhadidy, H; Franc, J; Moravec, P; Höschl, P; Fiederle, M 📂 Article 📅 2007 🏛 Institute of Physics 🌐 English ⚖ 481 KB

Studies on the nitrogen ion irradiation

✍ P. Jayavel; K. Santhakumar; K. Asokan 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 279 KB

High resolution deep level transient spe

✍ Evans-Freeman, J. H.; Kan, P. Y. Y.; Abdelgader, N. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 249 KB